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SEMICONDUCTOR
TECHNICAL DATA
KTC2825D
EPITAXIAL PLANAR NPN TRANSISTOR
LED DRIVE APPLICATION
FEATURES Adoption of MBIT processes. Low collector-to-emitter saturation voltage. Fast switching speed.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
Collector-Base Voltage
Vollector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Current(Pulse)
Base Current
Collector Power Dissipation Junction Temperature
Ta=25 TC=25
Storage Temperature Range
SYMBOL VCBO VCEO VEBO IC ICP IB PC PC Tj Tstg
RATING 60 60 6 3 6 600 1 15 150
-55 150
UNIT V V V A A mA W W
A C
M G
FF 123
E
BD
H K
J
DIM MILLIMETERS
A 6.6 +_0.2 B 6.1+_ 0.2
C 5.0 +_ 0.2
D 1.1+_ 0.2 E 2.7 +_ 0.2 F 2.3+_ 0.1
G 1.0 MAX
N
H J
2.3+_ 0.2 0.5+_ 0.1
K 1.0+_ 0.1
L LM
0.5+_ 0.1 0.95 MAX
N 0.9+_ 0.1
1. BASE 2.
KTC2825D Datasheet
