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SEMICONDUCTOR
TECHNICAL DATA
KTC3072D/L
EPITAXIAL PLANAR NPN TRANSISTOR
HIGH CURRENT APPLICATION CAMERA STROBO (For Electronic Flash Unit)
FEATURES Low Saturation Voltage : VCE(sat) = 0.4V(Max)(Ic=3A) High Performance at Low Supply Voltage.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
DC Pulse (Note1)
Collector Power Dissipation
Junction Temperature
VCBO VCEO VEBO
IC ICP PC Tj
Storage Temperature Range
Tstg
Note 1: Pulse Width 100mS, Duty Cycle 30%
RATING 40 20 7 5 8 1.0 150
-55 150
UNIT V V V
A
W
Q
A C
H FF
123 1. BASE 2. COLLECTOR 3. EMITTER
K
E
BD
M
I J
P L
O
DIM A B C D E F H I J K L M O P Q
MILLIMETERS 6.60 +_ 0.2 6.10 +_ 0.2 5.0 +_0.2 1.10+_ 0.2 2.70+_ 0.2 2.30+_ 0.
KTC3072D Datasheet
