900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf






KEC

KTC3194 Datasheet Preview

KTC3194 Datasheet

EPITAXIAL PLANAR NPN TRANSISTOR

No Preview Available !

SEMICONDUCTOR
TECHNICAL DATA
HIGH FREQUENCY LOW NOISE AMPLIFIER APPLICATION.
VHF BAND AMPLIFIER APPLICATION.
FEATURES
Small Reverse Transfer Capacitance
: Cre=0.7pF(Typ.).
Low Noise Figure : NF=2.5dB(Typ.) (f=100MHz).
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
VCBO
Collector-Emitter Voltage
VCEO
Emitter-Base Voltage
VEBO
Collector Current
IC
Emitter Current
IE
Collector Power Dissipation
PC
Junction Temperature
Tj
Storage Temperature Range
Tstg
RATING
40
30
4
20
-20
625
150
-55 150
UNIT
V
V
V
mA
mA
mW
KTC3194
EPITAXIAL PLANAR NPN TRANSISTOR
BC
KE
G
D
H
FF
1 23
N DIM MILLIMETERS
A 4.70 MAX
B 4.80 MAX
C 3.70 MAX
D 0.45
E 1.00
F 1.27
G 0.85
H 0.45
J 14.00 +_0.50
K 0.55 MAX
L 2.30
M 0.45 MAX
N 1.00
1. EMITTER
2. COLLECTOR
3. BASE
TO-92
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector Cut-off Current
ICBO
VCB=40V, IE=0
Emitter Cut-off Current
IEBO VEB=4V, IC=0
DC Current Gain
hFE (Note) VCE=6V, IC=1mA
Reverse Transfer Capacitance
Cre VCB=6V, f=1MHz, IE=0
Transition Frequency
fT VCE=6V, IC=1mA
Collector-Base Time Constant
Cc rbbVCB=6V, IE=-1mA, f=30MHz
Noise Figure
Power Gain
NF VCC=6V, IE=-1mA
Gpe f=100MHz (Fig.)
Note : hFE Classification R:40 80 , O:70 140 , Y:100 200
MIN.
-
-
40
-
300
-
-
15
TYP.
-
-
-
0.7
550
-
2.5
18
MAX.
0.5
0.5
200
-
-
30
5.0
-
UNIT
A
A
pF
MHz
pS
dB
2001. 12. 28
Revision No : 1
1/6




KEC

KTC3194 Datasheet Preview

KTC3194 Datasheet

EPITAXIAL PLANAR NPN TRANSISTOR

No Preview Available !

KTC3194
Fig. NF Gpe TEST CIRCUIT
INPUT
Rg=50
0.01µF
DUT
1000pF
0.02µF
6pF
L1
1000pF
0.02µF
-VE (IE =-1mA)
L1 : 0.8mmΦ SILVER PLATED COPPER WIRE, 4Turns.
10mm ID, 8mm Length.
VCC
y PARAMETERS (Typ.)
(1) COMMON EMITTER (VCE=6V, IE=-1mA, f=100MHz)
CHARACTERISTIC
Input Conductance
Input Capacitance
Reverse Transfer Admittance
Phase Angle of Reverse Transfer Admittance
Forward Transfer Admittance
Phase Angle of Forward Transfer Admittance
Output Conductance
Output Capacitance
SYMBOL
gie
Cie
|yre|
re
|yfe|
fe
goe
Coe
(2) COMMON BASE (VCE=6V, IE=-1mA, f=100MHz)
CHARACTERISTIC
Input Conductance
Input Capacitance
Reverse Transfer Admittance
Phase Angle of Reverse Transfer Admittance
Forward Transfer Admittance
Phase Angle of Forward Transfer Admittance
Output Conductance
Output Capacitance
2001. 12. 28
Revision No : 1
SYMBOL
gib
Cib
|yrb|
rb
|yfb|
fb
gob
Cob
TYP.
2.9
10.2
0.33
-90
40
-20
45
1.1
TYP.
34
-10
0.27
-105
34
165
45
1.1
OUTPUT
RL=50
UNIT
mS
pF
S
mS
S
pF
UNIT
mS
pF
S
mS
S
pF
2/6


Part Number KTC3194
Description EPITAXIAL PLANAR NPN TRANSISTOR
Maker KEC
PDF Download

KTC3194 Datasheet PDF






Similar Datasheet

1 KTC3190 EPITAXIAL PLANAR NPN TRANSISTOR
KEC
2 KTC3190 Silicon NPN transistor
BLUE ROCKET ELECTRONICS
3 KTC3191 EPITAXIAL PLANAR NPN TRANSISTOR (HIGH FREQUENCY LOW NOISE AMPLIFIER/ HF BAND AMPLIFIER)
KEC(Korea Electronics)
4 KTC3192 NPN Transistor
JCET
5 KTC3192 Silicon NPN transistor
BLUE ROCKET ELECTRONICS
6 KTC3192 EPITAXIAL PLANAR NPN TRANSISTOR
KEC
7 KTC3193 EPITAXIAL PLANAR NPN TRANSISTOR
KEC
8 KTC3194 Silicon NPN transistor
BLUE ROCKET ELECTRONICS
9 KTC3194 EPITAXIAL PLANAR NPN TRANSISTOR
KEC





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy