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KTC3226 - EPITAXIAL PLANAR NPN TRANSISTOR

Key Features

  • ᴌHigh DC Current Gain and Excellent hFE Linearity : hFE(1)=140ᴕ600 (VCE=1V, IC=0.5A) : hFE(2)=70(Min. ), 200(Typ. ) (VCE=1V, IC=2A). ᴌLow Saturation Voltage : VCE(sat)=0.5V(Max. ) (IC=2A, IB=50mA).

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Datasheet Details

Part number KTC3226
Manufacturer KEC
File Size 78.53 KB
Description EPITAXIAL PLANAR NPN TRANSISTOR
Datasheet download datasheet KTC3226 Datasheet

Full PDF Text Transcription for KTC3226 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for KTC3226. For precise diagrams, and layout, please refer to the original PDF.

SEMICONDUCTOR TECHNICAL DATA STROBO FLASH APPLICATION. HIGH CURRENT APLICATION. FEATURES ᴌHigh DC Current Gain and Excellent hFE Linearity : hFE(1)=140ᴕ600 (VCE=1V, IC=0....

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rrent Gain and Excellent hFE Linearity : hFE(1)=140ᴕ600 (VCE=1V, IC=0.5A) : hFE(2)=70(Min.), 200(Typ.) (VCE=1V, IC=2A). ᴌLow Saturation Voltage : VCE(sat)=0.5V(Max.) (IC=2A, IB=50mA). MAXIMUM RATING (Ta=25ᴱ) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current DC Pulse (Note1) Emitter Current Collector Power Dissipation Junction Temperature VCBO VCES VCEO VEBO IC ICP IE PC Tj Storage Temperature Range Tstg Note 1 : Pulse Width⏊10ms, Duty Cycle⏊30% RATING 30 30 10 6 2 5 -2 1 150 -55ᴕ150 UNIT V V V A A W ᴱ ᴱ O D KTC3226 EPITAXIAL PLANAR NPN TRANSISTOR BD G JA R P DEPTH

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