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SEMICONDUCTOR
TECHNICAL DATA
KTC3552T
EPITAXIAL PLANAR NPN TRANSISTOR
DC-DC CONVERTERS RELAY DRIVERS, LAMP DRIVERS, MOTOR DRIVERS, STROBES APPLICATION.
FEATURES ᴌAdoption of FBET, MBIT Processes. ᴌHigh Current Capacitance. ᴌLow Collector-to-Emitter Saturation Voltage. ᴌHigh-Speed Switching. ᴌUltrasmall Package Facilitates Miniaturization in end Products. ᴌHigh Allowable Power Dissipation. ᴌComplementary to KTA1552T.
MAXIMUM RATING (Ta=25ᴱ)
CHARACTERISTIC
SYMBOL RATING
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
DC Pulse
Base Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
VCBO VCES VCEO VEBO
IC ICP IB PC * Tj Tstg
80 80 50 6 3 6 600 0.9 150 -55ᴕ150
* Package mounted on a ceramic board (600Ὅᴧ0.