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KTC3553T - EPITAXIAL PLANAR NPN TRANSISTOR

Features

  • ᴌAdoption of MBIT Processes. ᴌHigh Current Capacitance. ᴌLow Collector-to-Emitter Saturation Voltage. ᴌUltrasmall-Sized Package permitting applied sets to be made small and slim. ᴌHigh Allowable Power Dissipation. ᴌComplementary to KTA1553T.

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Datasheet Details

Part number KTC3553T
Manufacturer KEC
File Size 82.89 KB
Description EPITAXIAL PLANAR NPN TRANSISTOR
Datasheet download datasheet KTC3553T Datasheet

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Full PDF Text Transcription

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SEMICONDUCTOR TECHNICAL DATA RELAY DRIVERS, LAMP DRIVERS, MOTOR DRIVERS AND STROBES APPLICATION. FEATURES ᴌAdoption of MBIT Processes. ᴌHigh Current Capacitance. ᴌLow Collector-to-Emitter Saturation Voltage. ᴌUltrasmall-Sized Package permitting applied sets to be made small and slim. ᴌHigh Allowable Power Dissipation. ᴌComplementary to KTA1553T. MAXIMUM RATING (Ta=25ᴱ) CHARACTERISTIC SYMBOL RATING Collector-Base Voltage VCBO 60 Collector-Emitter Voltage VCEO 50 Emitter-Base Voltage VEBO 6 Collector Current DC Pulse IC ICP 5 7 Base Current IB 1.2 Collector Power Dissipation PC * 0.9 Junction Temperature Tj 150 Storage Temperature Range Tstg -55ᴕ150 * Package mounted on a ceramic board (600Ὅᴧ0.
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