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KTC3605T - EPITAXIAL PLANAR NPN TRANSISTOR

Key Features

  • Low Noise Figure, High Gain. NF=1.1dB, |S21e|2=13dB (f=1GHz). Two internal isolated Transistors in one package.

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Datasheet Details

Part number KTC3605T
Manufacturer KEC
File Size 396.27 KB
Description EPITAXIAL PLANAR NPN TRANSISTOR
Datasheet download datasheet KTC3605T Datasheet

Full PDF Text Transcription for KTC3605T (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for KTC3605T. For precise diagrams, and layout, please refer to the original PDF.

SEMICONDUCTOR TECHNICAL DATA KTC3605T EPITAXIAL PLANAR NPN TRANSISTOR VHF/UHF WIDE BAND AMPLIFIER APPLICATION. FEATURES Low Noise Figure, High Gain. NF=1.1dB, |S21e|2=13d...

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PLICATION. FEATURES Low Noise Figure, High Gain. NF=1.1dB, |S21e|2=13dB (f=1GHz). Two internal isolated Transistors in one package. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature VCBO VCEO VEBO IC PC* Tj 20 10 1.5 40 900 150 Storage Temperature Range Tstg -55 150 *Package mounted on a ceramic board (600mm2 0.8mm) UNIT V V V mA mW EQUIVALENT CIRCUIT (Top View) 654 Q2 Q1 123 A F GG C L E K BK 16 25 34 D DIM A B C D E F G H I J K L MILLIMETERS 2.9+_ 0.2 1.6+0.2/-0.1 0.70+_ 0.05 0.4+_ 0

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