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SEMICONDUCTOR
TECHNICAL DATA
SWITCHING APPLICATION.
FEATURES High Current. Low VCE(sat). : VCE(sat) 250mV at IC=200mA/IB=10mA. Complementary to KTA2012V.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage
Collector Current
Collector Power Dissipation Junction Temperature Storage Temperature Range * Single pulse Pw=1mS.
VCBO VCEO VEBO
IC ICP * PC Tj Tstg
RATING 15 12 6 500 1 100 150
-55 150
UNIT V V V mA A mW
A G H
KTC4072V
EPITAXIAL PLANAR NPN TRANSISTOR
K
JD
E B
2 DIM MILLIMETERS A 1.2 +_0.05
B 0.8 +_0.05 1 3 C 0.5 +_ 0.05
D 0.3 +_ 0.05 E 1.2 +_ 0.05 G 0.8 +_ 0.05
PP
H 0.40 J 0.12+_ 0.05 K 0.2 +_ 0.05
P5
1. EMITTER 2. BASE 3.
KTC4072V Datasheet
