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J B
EG
SEMICONDUCTOR
TECHNICAL DATA
KTC4375
EPITAXIAL PLANAR NPN TRANSISTOR
HIGH CURRENT APPLICATION.
FEATURES 1W (Mounted on Ceramic Substrate). Small Flat Package. Complementary to KTA1663.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL RATING
Collector-Base Voltage
VCBO
30
Collector-Emitter Voltage
VCEO
30
Emitter-Base Voltage
VEBO
5
Collector Current
IC 1.5
Base Current
IB 0.3
Collector Power Dissipation
PC 500 PC* 1
Junction Temperature
Tj 150
Storage Temperature Range
Tstg -55 150
PC* : KTC4375 mounted on ceramic substrate (250mm2x0.8t)
UNIT V V V A A mW W
A H L M
N
DD K
FF
C
123
1. BASE 2. COLLECTOR (HEAT SINK) 3. EMITTER
G
DIM A B C D E F G H J K L M N
MILLIMETERS 4.70 MAX 2.50 +_0.20 1.70 MAX
0.45+0.15/-0.10
4.25 MAX 1.50+_ 0.10
0.40 TYP 1.75 MAX
0.
KTC4375 Datasheet
