Full PDF Text Transcription for KTC4666 (Reference)
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KTC4666. For precise diagrams, and layout, please refer to the original PDF.
SEMICONDUCTOR TECHNICAL DATA KTC4666 EPITAXIAL PLANAR NPN TRANSISTOR LOW NOISE AMPLIFIER APPLICATION. FEATURE High hFE : hFE=600 3600. Noise Figure : 0.5dB(Typ.) at f=100...
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. FEATURE High hFE : hFE=600 3600. Noise Figure : 0.5dB(Typ.) at f=100kHz. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range VCBO VCEO VEBO IC IB PC Tj Tstg 60 50 8 150 30 200 150 -55 150 * Package mounted on 99.5% alumina 10mm 8mm 0.6mm UNIT V V V mA mA mW A J G E MBM DIM MILLIMETERS DA 2.00+_ 0.20 2 B 1.25+_ 0.15 13 C 0.90+_ 0.10 D 0.3+0.10/-0.05 E 2.10 +_ 0.20 G 0.65 P H 0.15+0.1/-0.06 J 1.30 K 0.00~0.10 C L L HM 0.70 0.42 +_0.10 NK N N 0.10 MI
KTC4666 Datasheet
