Datasheet Summary
SEMICONDUCTOR
TECHNICAL DATA
HIGH FREQUENCY APPLICATION. HF, VHF BAND AMPLIFIER APPLICATION.
FEATURE ᴌHigh Power Gain : Gpe=29dB(Typ.) at f=10.7MHz.
MAXIMUM RATING (Ta=25ᴱ)
CHARACTERISTIC
SYMBOL
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Emitter Current Collector Power Dissipation Junction Temperature Storage Temperature Range
VCBO VCEO VEBO
IC IE PC Tj Tstg
RATING 35 30 5 50 -50 625 150
-55ᴕ150
UNIT V V V mA mA mW ᴱ ᴱ
EPITAXIAL PLANAR NPN TRANSISTOR
1 23
N DIM MILLIMETERS A 4.70 MAX B 4.80 MAX C 3.70 MAX D 0.45 E 1.00 F 1.27 G 0.85 H 0.45 J 14.00 +_0.50 K 0.55 MAX L 2.30 M 0.45 MAX N 1.00
1....