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SEMICONDUCTOR
TECHNICAL DATA
HIGH POWER AMPLIFIER APPLICATION.
FEATURES Complementary to KTB817B. Recommended for 60W Audio Frequency Amplifier Output Stage.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
DC Pulse
Collector Power Dissipation (Tc=25 )
Junction Temperature
Storage Temperature Range
SYMBOL VCBO VCEO VEBO IC ICP PC Tj Tstg
RATING 160 140 6 12 15 100 150
-55 150
UNIT V V V
A
W
H
KTD1047B
TRIPLE DIFFUSED NPN TRANSISTOR
A NQ O
D E d
PP
123 1. BASE 2. COLLECTOR (HEAT SINK) 3. EMITTER
G L
IF C J
R
B
K
DIM MILLIMETERS A 15.60 +_ 0.20 B 4.80 +_ 0.20 C 19.90 +_ 0.20 D 2.00 +_ 0.20 d 1.00 +_ 0.20 E 3.00 +_ 0.20 F 3.80 +_ 0.20 G 3.50 +_ 0.20
H 13.90 +_ 0.20 I 12.76 +_ 0.20 J 23.40 +_ 0.
KTD1047B Datasheet
