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SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
FEATURES High Breakdown Voltage and High Current : VCEO=80V, IC=1A. Low VCE(sat) Complementary to KTB1241.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector-Base Voltage Collector-Emitter Voltage Emitter Base Voltage Collector Current Emitter Current Collector Power Dissipation Junction Temperature
VCBO VCEO VEBO
IC IE PC Tj
Storage Temperature Range
Tstg
RATING 100 80 5 1 -1 1 150
-55 150
UNIT V V V A A W
O D
KTD1863
EPITAXIAL PLANAR NPN TRANSISTOR
BD
G JA R
P DEPTH:0.2
C
Q K
FF
HH M EM
123
HL
NN 1. EMITTER
2. COLLECTOR
3. BASE
DIM MILLIMETERS
A 7.20 MAX
B 5.20 MAX S C 0.60 MAX
D 2.50 MAX
E 1.15 MAX
F 1.27
G 1.70 MAX
H 0.55 MAX J 14.00+_ 0.50
HK L
0.35 MIN 0.75+_ 0.10
M4
N 25
O 1.25
P Φ1.
KTD1863 Datasheet
