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SEMICONDUCTOR
TECHNICAL DATA
KTD2092
EPITAXIAL PLANAR NPN TRANSISTOR
SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.
FEATURES ᴌHigh hFE : hFE=500ᴕ1500 (IC=0.5A). ᴌLow Collector Saturation :VCE(sat)=0.35V(Max.) (IC=1A).
MAXIMUM RATING (Ta=25ᴱ)
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
DC Pulse
Base Current
VCBO VCEO VEBO
IC ICP IB
Collector Power Dissipation
Ta=25ᴱ Tc=25ᴱ
Junction Temperature
PC Tj
Storage Temperature Range
Tstg
RATING 100 80 7 3 5 1 2 25 150
-55ᴕ150
UNIT V V V
A
A
W
ᴱ ᴱ
O Q
A U
E
K
LL
M DD
NN T
T
123
J
GF B P
C
DIM MILLIMETERS
A 10.30 MAX
B 15.30 MAX C 2.70Ź0.30 S D 0.85 MAX
E Ѹ3.20Ź0.20 F 3.00Ź0.30
G 12.30 MAX
T
RH
0.75 MAX
J 13.60Ź0.50
K 3.
KTD2092 Datasheet
