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KTK5133S Datasheet Preview

KTK5133S Datasheet

N-CHANNEL MOS FIELD EFFECT TRANSISTOR

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SEMICONDUCTOR
TECHNICAL DATA
ULTRA-HIGH SPEED SWITCHING APPLICATIONS
ANALOG SWITCH APPLICATIONS
FEATURES
2.5 Gate Drive.
Low Threshold Voltage : Vth=0.5
High Speed.
Small Package.
Enhancement-Mode.
1.5V.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Drain-Source Voltage
VDS
Gate-Source Voltage
VGSS
DC Drain Current
ID
Drain Power Dissipation
PD
Channel Temperature
Tch
Storage Temperature Range
Tstg
EQUIVALENT CIRCUIT
D
RATING
30
20
150
200
150
-55 150
UNIT
V
V
mA
mW
G
KTK5133S
N CHANNEL MOS FIELD
EFFECT TRANSISTOR
E
L BL
DIM MILLIMETERS
A 2.93+_ 0.20
B 1.30+0.20/-0.15
23
C 1.30 MAX
D 0.40+0.15/-0.05
E 2.40+0.30/-0.20
1 G 1.90
H 0.95
J 0.13+0.10/-0.05
K 0.00 ~ 0.10
Q
PP
L 0.55
M 0.20 MIN
N 1.00+0.20/-0.10
P7
Q 0.1 MAX
M
1. SOURCE
2. GATE
3. DRAIN
SOT-23
Marking
KCType Name
Lot No.
S
THIS TRANSISTOR IS ELECTROSTATIC SENSITIVE DEVICE.
PLEASE HANDLE WITH CAUTION.
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Gate Leakage Current
Drain-Source Breakdown Voltage
Drain Cut-off Current
Gate Threshold Voltage
Forward Transfer Admittance
Drain-Source ON Resistance
Input Capacitance
Reverse Transfer Capacitance
Output Capacitance
Switching Time
Turn-on Time
Turn-off Time
IGSS
V(BR)DSS
IDSS
Vth
|Yfs|
RDS(ON)
Ciss
Crss
Coss
ton
toff
TEST CONDITION
VGS= 16V, VDS=0V
ID=100 A, VGS=0V
VDS=30V, VGS=0V
VDS=3V, ID=0.1mA
VDS=10V, ID=80mA
ID=40mA, VGS=2.5V
VDS=10V, VGS=0V, f=1MHz
VDS=10V, VGS=0V, f=1MHz
VDS=10V, VGS=0V, f=1MHz
VDD=15V, ID=80mA, VGS=0 4V
MIN.
-
30
-
0.5
100
-
-
-
-
-
-
TYP.
-
-
-
-
-
3.7
7.0
2.3
5.9
84
275
MAX.
1
-
1
1.5
-
5.2
-
-
-
-
-
UNIT
A
V
A
V
mS
pF
pF
pF
nS
nS
2001. 10. 29
Revision No : 0
1/3




KEC

KTK5133S Datasheet Preview

KTK5133S Datasheet

N-CHANNEL MOS FIELD EFFECT TRANSISTOR

No Preview Available !

KTK5133S
2001. 10. 29
Revision No : 0
2/3


Part Number KTK5133S
Description N-CHANNEL MOS FIELD EFFECT TRANSISTOR
Maker KEC
PDF Download

KTK5133S Datasheet PDF





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