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KTK5134S - N-CHANNEL MOS FIELD EFFECT TRANSISTOR

Key Features

  • 2.5 Gate Drive. Low Threshold Voltage : Vth=0.5 High Speed. Small Package. Enhancement-Mode. 1.5V.

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Datasheet Details

Part number KTK5134S
Manufacturer KEC
File Size 744.09 KB
Description N-CHANNEL MOS FIELD EFFECT TRANSISTOR
Datasheet download datasheet KTK5134S Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SEMICONDUCTOR TECHNICAL DATA ULTRA-HIGH SPEED SWITCHING APPLICATIONS ANALOG SWITCH APPLICATIONS FEATURES 2.5 Gate Drive. Low Threshold Voltage : Vth=0.5 High Speed. Small Package. Enhancement-Mode. 1.5V. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Drain-Source Voltage VDS Gate-Source Voltage VGSS DC Drain Current ID Drain Power Dissipation PD Channel Temperature Tch Storage Temperature Range Tstg EQUIVALENT CIRCUIT D RATING 30 20 200 200 150 -55 150 UNIT V V mA mW G KTK5134S N CHANNEL MOS FIELD EFFECT TRANSISTOR E L BL DIM MILLIMETERS A 2.93+_ 0.20 B 1.30+0.20/-0.15 A G H D 23 C 1.30 MAX D 0.40+0.15/-0.05 E 2.40+0.30/-0.20 1 G 1.90 H 0.95 J 0.13+0.10/-0.05 K 0.00 ~ 0.10 Q PP L 0.55 M 0.20 MIN N 1.00+0.20/-0.10 C N K J P7 Q 0.1 MAX M 1. SOURCE 2.