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SEMICONDUCTOR
TECHNICAL DATA
KTX301E
EPITAXIAL PLANAR PNP TRANSISTOR SILICON EPITAXIAL PLANAR TYPE DIODE
GENERAL PURPOSE APPLICATION. ULTRA HIGH SPEED SWITCHING APPLICATION.
FEATURES Including two(TR, Diode) devices in TESV. (Thin Extreme Super mini type with 5pin.) Simplify circuit design. Reduce a quantity of parts and manufacturing process.
EQUIVALENT CIRCUIT (TOP VIEW)
54
Marking
5
Q1 D1
CType Name
12 3
12
4 Lot No.
hFE Rank 3
MARK SPEC Type Mark
KTX301E Q1 hFE Rank : Y
CA
KTX301E Q1 hFE Rank : GR
CB
H
A A1 CC
B B1
1 5 DIM MILLIMETERS A 1.6 +_ 0.05 A1 1.0+_ 0.05
2 B 1.6+_ 0.05 B1 1.2+_ 0.05
3 4 C 0.50 D 0.2+_ 0.05 H 0.5+_ 0.05
P P J 0.12+_ 0.05 P5
1. D1 ANODE 2. Q 1 EMITTER 3. Q 1 BASE 4. Q 1 COLLECTOR 5.
KTX301E Datasheet
