KTX302U
FEATURES
Including two(TR, Diode) devices in USV. (Ultra Super Mini type with 5 leads) Simplify circuit design. Reduce a quantity of parts and manufacturing process.
EQUIVALENT CIRCUIT (TOP VIEW)
Marking
D1 Q1
Type Name
Lot No.
MARK SPEC Type Mark
KTX302U Q1 h FE Rank : Y
KTX302U Q1 h FE Rank : GR
MAXIMUM RATINGS (Ta=25 ) TRANSISTOR Q1
CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Emitter Current Collector Power Dissipation Junction Temperature Storage Temperature Range
DIODE (SBD) D1 CHARACTERISTIC
Maximum (Peak) Reverse Voltage Reverse Voltage Maximum (Peak) Forward Current Average Forward Current Surge Current (10m S) Junction Temperature Storage Temperature Range
SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg
SYMBOL VRM VR IFM IO IFSM Tj Tstg
2008. 8. 29
Revision No : 2
A A1 CC
EPITAXIAL PLANAR PNP TRANSISTOR SCHOTTKY BARRIER TYPE DIODE
B B1
1 5 DIM MILLIMETERS A 2.00+_ 0.20
2 A1...
