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SEMICONDUCTOR
TECHNICAL DATA
TV Control board Application
FEATURES One NPN Transistor (Q1) Two Switching Diode (D1, D2) Low Saturation Voltage : VCE(sat) = 0.25V(Max)@ IC = 100mA, IB = 10mA Suffix U : Qualified to AEC-Q101. ex) KTX811T-RTK/HU
EQUIVALENT CIRCUIT (TOP VIEW)
654
D2 Q1
D1
Marking
654
Lot No.
Type Name
T8
123
123
MAXIMUM RATING (Ta=25 )
TRANSISTOR CHARACTERISTIC
Collector-Base Voltage Collector-Emitter Voltage
Emitter-Base Voltage Collector Current
Base Current DIODE
CHARACTERISTIC
Maximum (Peak) Reverse Voltage Reverse Voltage Maximum (Peak) Forward Current Average Forward Current
Surge Current (100 )
COMMON
CHARACTERISTIC
Power Dissipation
Junction Temperature
Storage Temperature Range
* : Package mounted on a ceramic board (600mm2 0.
KTX811T Datasheet
