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KU024N06P Datasheet N-ch Trench MOS FET

Manufacturer: KEC

General Description

This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics.

It is mainly suitable for DC/DC Converter, Synchronous Rectification and a load switch in battery powered applications

Overview

SEMICONDUCTOR TECHNICAL DATA General.

Key Features

  • VDSS= 60V, ID= 200A Drain-Source ON Resistance : RDS(ON)=2.4m (Max. ) @VGS = 10V KU024N06P N-ch Trench MOS FET K.