KU024N06P Overview
Description
This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for DC/DC Converter, Synchronous Rectification and a load switch in battery powered applications FEATURES VDSS= 60V, ID= 200A Drain-Source ON Resistance : RDS(ON)=2.4m (Max.) @VGS = 10V KU024N06P N-ch Trench MOS FET K MAXIMUM RATING (Tc=25 CHARACTERISTIC Drain-Source Voltage Gate-Source Voltage @TC=25 Drain Current @TC=100 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) Drain Power Dissipation Tc=25 ) SYMBOL VDSS VGSS ID 126 IDP EAS EAR dv/dt PD 504* 1,500 20 4.5 192 1.54 Tj Tstg 150 -55 ~ 150 mJ mJ V/ns W W/ A RATING 60 20 200* UNIT V V Derate above 25 Maximum Junction Temperature Storage Temperature Range RthJC RthJA 0.65 62.5 /W /W * : Drain current limited by maximum junction temperature.
Key Features
- Repetitive Avalanche Energy (Note
- Peak Diode Recovery dv/dt (Note
