VDSS= 60V, ID= 200A Drain-Source ON Resistance : RDS(ON)=2.4m (Max.) @VGS = 10V KU024N06P N-ch Trench MOS FET K MAXIMUM RATING (Tc=25 CHARACTERISTIC Drain-Source Volta.

FEATURES VDSS= 60V, ID= 200A Drain-Source ON Resistance : RDS(ON)=2.4m (Max.) @VGS = 10V KU024N06P N-ch Trench MOS FET .

This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for DC/DC Converter, Synchronous Rectification and a load switch in battery .

KU034N08P

KU035N06P

KU045N10P

KU047N08P

KU048N03D

KU054N03D

KU056N03Q

KU063N03Q

KU068N03D

KU086N10F

KU086N10P

KU1011S28

KU1011S64