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KU086N10F - N-Channel MOSFET

Download the KU086N10F datasheet PDF. This datasheet also covers the KU086N10P variant, as both devices belong to the same n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics.

Key Features

  • VDSS= 100V, ID= 95A Drain-Source ON Resistance : RDS(ON)=8.6m (Max. ) @VGS = 10V.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (KU086N10P-KEC.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number KU086N10F
Manufacturer KEC
File Size 1.24 MB
Description N-Channel MOSFET
Datasheet download datasheet KU086N10F Datasheet

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Other Datasheets by KEC

Part Number Description
KU086N10P N-Channel MOSFET
KU024N06P N-ch Trench MOS FET
KU034N08P N-ch Trench MOS FET
KU035N06P N-ch Trench MOS FET
KU045N10P N-ch Trench MOS FET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SEMICONDUCTOR TECHNICAL DATA General Description This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for DC/DC Converter, Synchronous Rectification and a load switch in battery powered applications FEATURES VDSS= 100V, ID= 95A Drain-Source ON Resistance : RDS(ON)=8.6m (Max.