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KU3600N10D - N-Channel MOSFET

General Description

This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics.

It is mainly suitable for LED Lighting and DC/DC Converters.

Key Features

  • VDSS(Min. )= 100V, ID= 5A Drain-Source ON Resistance : RDS(ON)=0.36 Qg(typ. ) =4.2nC (max) @VGS =10V.

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Datasheet Details

Part number KU3600N10D
Manufacturer KEC
File Size 554.22 KB
Description N-Channel MOSFET
Datasheet download datasheet KU3600N10D Datasheet

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Full PDF Text Transcription (Reference)

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SEMICONDUCTOR TECHNICAL DATA General Description This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for LED Lighting and DC/DC Converters. FEATURES VDSS(Min.)= 100V, ID= 5A Drain-Source ON Resistance : RDS(ON)=0.36 Qg(typ.) =4.