KU3600N10W mosfet equivalent, n-channel mosfet.
VDSS(Min.)= 100V, ID= 1.7A Drain-Source ON Resistance : RDS(ON)=0.36 Qg(typ.) =4.2nC
(max) @VGS =10V
MAXIMUM RATING (Tc=25 )
CHARACTERISTIC
SYMBOL RATING
Drain-Sourc.
This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for LED Lighting and DC/DC Converters.
FEATURES VDSS(Min.)= 100V, ID= 1.7A.
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