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KU3600N10W Datasheet, KEC

KU3600N10W mosfet equivalent, n-channel mosfet.

KU3600N10W Avg. rating / M : 1.0 rating-13

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KU3600N10W Datasheet

Features and benefits

VDSS(Min.)= 100V, ID= 1.7A Drain-Source ON Resistance : RDS(ON)=0.36 Qg(typ.) =4.2nC (max) @VGS =10V MAXIMUM RATING (Tc=25 ) CHARACTERISTIC SYMBOL RATING Drain-Sourc.

Description

This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for LED Lighting and DC/DC Converters. FEATURES VDSS(Min.)= 100V, ID= 1.7A.

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KU3600N10W Page 1 KU3600N10W Page 2 KU3600N10W Page 3

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