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SEMICONDUCTOR
TECHNICAL DATA
HIGH CURRENT APPLICATION.
FEATURE Complementary to MPS8550SC.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL RATING
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature
VCBO VCEO VEBO
IC PC * Tj
40 25 5 1,200 350 150
Storage Temperature Range
Tstg -55 150
* PC : Package Mounted On 99.5% Alumina (10 8 0.6 )
UNIT V V V mA mW
MPS8050SC
EPITAXIAL PLANAR NPN TRANSISTOR
A G
D
E L BL
23 1
M
DIM MILLIMETERS A 2.90+_ 0.1 B 1.30+0.20/-0.15 C 1.30 MAX D 0.40+0.15/-0.05 E 2.40+0.30/-0.20 G 1.90 J 0.10 K 0.00 ~ 0.10 L 0.55 M 0.20 MIN N 1.00+0.20/-0.10
1. EMITTER 2. BASE 3. COLLECTOR
SOT-23(1)
C N K J
Marking
CBKType Name
Lot No.
MPS8050SC Datasheet
