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PG12FBUSV - TVS Diode Array

Key Features

  • 200 Watts peak pulse power (tp=8/20 s) A1 1 B B1 5 Transient protection for data lines to IEC 61000-4-2(ESD) 15kV(Air), 8kV(Contact) IEC 61000-4-4(EFT) 40A(tp=5/50ns) IEC 61000-4-5(Lightning) 8A(tp=8/20 s) Protects four I/O lines. Low clamping voltage. Low operating and leakage current. Small package for use in protable electronics. A 2 DIM A A1 B D B1 C D G H T 3 4.

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Datasheet Details

Part number PG12FBUSV
Manufacturer KEC
File Size 52.50 KB
Description TVS Diode Array
Datasheet download datasheet PG12FBUSV Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SEMICONDUCTOR TECHNICAL DATA Protection in Portable Electronics Applications. PG12FBUSV TVS Diode Array for ESD Protection in Portable Electronics FEATURES 200 Watts peak pulse power (tp=8/20 s) A1 1 B B1 5 Transient protection for data lines to IEC 61000-4-2(ESD) 15kV(Air), 8kV(Contact) IEC 61000-4-4(EFT) 40A(tp=5/50ns) IEC 61000-4-5(Lightning) 8A(tp=8/20 s) Protects four I/O lines. Low clamping voltage. Low operating and leakage current. Small package for use in protable electronics. A 2 DIM A A1 B D B1 C D G H T 3 4 MILLIMETERS _ 0.20 2.00+ _ 0.1 1.3+ _ 0.1 2.1 + _ 0.1 1.25 + 0.65 0.2+0.10/-0.05 0-0.1 _ 0.1 0.9+ 0.15+0.1/-0.05 H C C T G APPLICATIONS Cellular Phone Handsets and Accessories. Cordless Phones.