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KEC

PG12GSUSC Datasheet Preview

PG12GSUSC Datasheet

TVS Diode

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SEMICONDUCTOR
TECHNICAL DATA
Protection in Portable Electronics Applications.
FEATURES
350 Watts peak pulse power (tp=8/20 s)
Transient protection for data lines to
IEC 61000-4-4(EFT) 40A(tp=5/50ns)
IEC 61000-4-5(Lightning) 15A(tp=8/20 s)
Small package for use in portable electronics.
Suitable replacement for Multi-Layer Varistors in ESD
protection applications.
Protects on I/O or power line.
Low clamping voltage.
Low leakage current.
APPLICATIONS
Cell phone handsets and accessories.
Microprocessor based equipment.
Notebooks, desktops, & servers.
Portable instrumentation.
PG12GSUSC
Single Line TVS Diode for ESD
Protection in Portable Electronics
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Peak Pulse Power (tp=8/20 s)
PPK
Peak Pulse Current (tp=8/20 s)
IPP
Operating Temperature
Tj
Storage Temperature
Tstg
RATING
350
15
150
-55 150
UNIT
W
A
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Reverse Stand-Off Voltage
Reverse Breakdown Voltage
Reverse Leakage Current
VRWM
VBR
IR
Clamping Voltage
VC
Junction Capacitance
CJ
Electrostatic discharge
VESD
TEST CONDITION
-
It=1mA
VRWM=12V
IPP=5A, tp=8/20 s
IPP=15A, tp=8/20 s
VR=0V, f=1MHz
IEC-61000-4-2
Air
Contact
MIN.
-
13.8
-
-
-
-
20
20
TYP.
-
-
-
-
-
-
-
MAX.
12
-
1
19
25
150
UNIT
V
V
A
V
pF
- KV
2014. 3. 31
Revision No : 3
1/2




KEC

PG12GSUSC Datasheet Preview

PG12GSUSC Datasheet

TVS Diode

No Preview Available !

PG12GSUSC
2014. 3. 31
Revision No : 3
2/2


Part Number PG12GSUSC
Description TVS Diode
Maker KEC
Total Page 2 Pages
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