Full PDF Text Transcription for TIP117 (Reference)
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SEMICONDUCTOR TECHNICAL DATA TIP117 EPITAXIAL PLANAR PNP TRANSISTOR MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE. FEATURES ᴌHigh DC C...
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LT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE. FEATURES ᴌHigh DC Current Gain. : hFE=1000(Min.), ᷤVCE=-4V, IC=-1A. ᴌLow Collector-Emitter Saturation Voltage. ᴌComplementary to TIP112. MAXIMUM RATING (Ta=25ᴱ) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current DC Pulse Base Current DC VCBO VCEO VEBO IC ICP IB Collector Power Dissipation Ta=25ᴱ Tc=25ᴱ Junction Temperature PC Tj Storage Temperature Range Tstg RATING -100 -100 -5 -2 -4 -50 2 50 150 -65ᴕ150 UNIT V V V A mA W ᴱ ᴱ E Q H A R S F B D T L CC MM K 123 J 1. BASE 2. COLLECTOR (HEAT SINK) 3.
TIP117 Datasheet
