Full PDF Text Transcription for TIP117F (Reference)
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SEMICONDUCTOR TECHNICAL DATA TIP117F EPITAXIAL PLANAR PNP TRANSISTOR MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE. FEATURES High DC C...
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ILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE. FEATURES High DC Current Gain. : hFE=1000(Min.), VCE=-4V, IC=-1A. Low Collector-Emitter Saturation Voltage. Complementary to TIP112F. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current DC Pulse Base Current DC VCBO VCEO VEBO IC ICP IB Collector Power Dissipation Ta=25 Tc=25 PC Junction Temperature Tj Storage Temperature Range Tstg RATING -100 -100 -5 -2 -4 -50 2 20 150 -65 150 UNIT V V V A mA W O Q A U E K LL M DD NN T T 123 G B J F P C DIM MILLIMETERS A 10.30 MAX B 15.30 MAX C 2.70ลน0.30 S
TIP117F Datasheet
