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KDG40R12KT3 - IGBT Module

Datasheet Summary

Description

VCES Collector-Emitter Blocking Voltage VGES IC ICM(1) tSC PD Gate-Emitter Voltage Continuous Collector Current Peak Collector Current Repetitive Short Circuit Withstand Time Maximum Power Dissipation (IGBT) TC = 80℃ TC = 25℃ TJ = 150℃ TJ = 150℃ TC = 25℃ TJmax=150℃ Internal Circuit Diagram Val

Features

  • IGBT Inverter Short Circuit Rated 10μs.
  • IGBT Inverter Low Saturation Voltage.
  • Low Switching Loss.
  • Low Stray Inductance.
  • Lead Free, Compliant With RoHS Requirement KDG40R12KT3.

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Datasheet Details

Part number KDG40R12KT3
Manufacturer KEDA
File Size 768.66 KB
Description IGBT Module
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KDG40R12KT3 IGBT Module Features:  IGBT Inverter Short Circuit Rated 10μs  IGBT Inverter Low Saturation Voltage  Low Switching Loss  Low Stray Inductance  Lead Free, Compliant With RoHS Requirement KDG40R12KT3 Applications:  Industrial Inverters  Servo Applications IGBT-Inverter Absolute Maximum Ratings (TC = 25℃ unless otherwise specified) Symbol Description VCES Collector-Emitter Blocking Voltage VGES IC ICM(1) tSC PD Gate-Emitter Voltage Continuous Collector Current Peak Collector Current Repetitive Short Circuit Withstand Time Maximum Power Dissipation (IGBT) TC = 80℃ TC = 25℃ TJ = 150℃ TJ = 150℃ TC = 25℃ TJmax=150℃ Internal Circuit Diagram Value 1200 ±20 40 80 80 >10 255 Units V V A A A μs W Characteristic Values (TJ = 25℃ unless otherwise specified) Symbol Desc
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