AO3418 - N-Channel MOSFET

Description

The AO3418 uses advanced trench technology to provide excellent RDS(ON), very low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a load switch or in PWM applications.

AO3418L ( Green Product ) is offered in a lead-free package.

Features

VDS (V) = 30V ID = 3.8 A RDS(ON) < 60mΩ (VGS = 10V) RDS(ON) < 70mΩ (VGS = 4.5V) RDS(ON) < 155mΩ (VGS = 2.5V) AO3418, AO3418L ( Green Product ) N-Channel Enhancement Mode Field Effect Transistor TO-236 (SOT-23) Top View General.

KERSEMI

📥 Download Datasheet

Datasheet Details

Part number	AO3418
Manufacturer	KERSEMI
File Size	818.43 KB
Description	N-Channel MOSFET
Datasheet	AO3418 Datasheet
Additional preview pages of the AO3418 datasheet.

📁 Similar Datasheet

AO3418 - 30V N-Channel MOSFET (Alpha & Omega Semiconductors)
AO3410 - N-Channel MOSFET (Alpha & Omega Semiconductors)
AO3411 - P-Channel MOSFET (Freescale)
AO3413 - 20V P-Channel MOSFET (Alpha & Omega Semiconductors)
AO3414 - 20V N-Channel MOSFET (Alpha & Omega Semiconductors)
AO3414 - N-Channel MOSFET (Kexin)
AO3414 - N-Channel MOSFET (VBsemi)
AO3414A - N-Channel Enhancement MOSFET (UMW)
AO3414A - N-Channel MOSFET (VBsemi)
AO3414L - N-Channel MOSFET (Alpha & Omega Semiconductors)

Other Datasheets by KERSEMI

AO3418L - N-Channel MOSFET

Full PDF Text Transcription

Click to expand full text

Features VDS (V) = 30V ID = 3.8 A RDS(ON) < 60mΩ (VGS = 10V) RDS(ON) < 70mΩ (VGS = 4.5V) RDS(ON) < 155mΩ (VGS = 2.5V) AO3418, AO3418L ( Green Product ) N-Channel Enhancement Mode Field Effect Transistor TO-236 (SOT-23) Top View General Description The AO3418 uses advanced trench technology to provide excellent RDS(ON), very low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. AO3418L ( Green Product ) is offered in a lead-free package.

Published: Apr 1, 2016 |