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AO3418L - N-Channel MOSFET

This page provides the datasheet information for the AO3418L, a member of the AO3418 N-Channel MOSFET family.

Description

The AO3418 uses advanced trench technology to provide excellent RDS(ON), very low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a load switch or in PWM applications.

AO3418L ( Green Product ) is offered in a lead-free package.

Features

  • VDS (V) = 30V ID = 3.8 A RDS(ON) < 60mΩ (VGS = 10V) RDS(ON) < 70mΩ (VGS = 4.5V) RDS(ON) < 155mΩ (VGS = 2.5V) AO3418, AO3418L ( Green Product ) N-Channel Enhancement Mode Field Effect Transistor TO-236 (SOT-23) Top View General.

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Datasheet preview – AO3418L

Datasheet Details

Part number AO3418L
Manufacturer KERSEMI
File Size 818.43 KB
Description N-Channel MOSFET
Datasheet download datasheet AO3418L Datasheet
Additional preview pages of the AO3418L datasheet.

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Full PDF Text Transcription

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Features VDS (V) = 30V ID = 3.8 A RDS(ON) < 60mΩ (VGS = 10V) RDS(ON) < 70mΩ (VGS = 4.5V) RDS(ON) < 155mΩ (VGS = 2.5V) AO3418, AO3418L ( Green Product ) N-Channel Enhancement Mode Field Effect Transistor TO-236 (SOT-23) Top View General Description The AO3418 uses advanced trench technology to provide excellent RDS(ON), very low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. AO3418L ( Green Product ) is offered in a lead-free package.
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