900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf






KERSEMI

BCR3KM-12LA Datasheet Preview

BCR3KM-12LA Datasheet

Triac

No Preview Available !

Features
IT (RMS) : 3 A
VDRM : 600 V
IFGTI , IRGTI, IRGT: 20 mA (10 mA)Note5
Viso : 2000 V
Outline
TO-220FN
1
23
BCR3KM-12LA
Insulated Type
Planar Passivation Type
UL Recognized : Yellow Card No. E223904
File No. E80271
2
3
1
1. T1 Terminal
2. T2 Terminal
3. Gate Terminal
Applications
Switching mode power supply, small motor control, heater control, solenoid driver, and other general controlling
devices
Maximum Ratings
Parameter
Repetitive peak off-state voltageNote1
Non-repetitive peak off-state voltageNote1
Symbol
VDRM
VDSM
Voltage class
12
600
720
Unit
V
V
www.kersemi.com




KERSEMI

BCR3KM-12LA Datasheet Preview

BCR3KM-12LA Datasheet

Triac

No Preview Available !

BCR3KM-12LA
Parameter
RMS on-state current
Surge on-state current
I2t for fusing
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction temperature
Storage temperature
Mass
Isolation voltage
Notes: 1. Gate open.
Symbol
IT (RMS)
ITSM
I2t
PGM
PG (AV)
VGM
IGM
Tj
Tstg
Viso
Ratings
3
30
3.7
3
0.3
6
0.5
– 40 to +125
– 40 to +125
2.0
2000
Unit
A
A
A2s
W
W
V
A
°C
°C
g
V
Conditions
Commercial frequency, sine full wave
360° conduction, Tc = 109°C
60Hz sinewave 1 full cycle, peak value,
non-repetitive
Value corresponding to 1 cycle of half
wave 60Hz, surge on-state current
Typical value
Ta = 25°C, AC 1 minute,
T1·T2·G terminal to case
Electrical Characteristics
Parameter
Symbol Min. Typ. Max. Unit
Test conditions
Repetitive peak off-state current
On-state voltage
Gate trigger voltageNote2
Ι
ΙΙ
Gate trigger currentNote2
ΙΙΙ
Ι
ΙΙ
ΙΙΙ
Gate non-trigger voltage
Thermal resistance
Critical-rate of rise of off-state
commutating voltageNote4
IDRM
VTM
VFGTΙ
VRGTΙ
VRGTΙΙΙ
IFGTΙ
IRGTΙ
IRGTΙΙΙ
VGD
Rth (j-c)
(dv/dt)c
0.2
5
— 2.0 mA Tj = 125°C, VDRM applied
— 1.5 V Tc = 25°C, ITM = 4.5 A,
Instantaneous measurement
— 1.5 V Tj = 25°C, VD = 6 V, RL = 6 ,
— 1.5 V RG = 330
— 1.5
V
20Note5
mA Tj = 25°C, VD = 6 V, RL = 6 ,
20Note5
mA RG = 330
20Note5
mA
— — V Tj = 125°C, VD = 1/2 VDRM
— 4.0 °C/W Junction to caseNote3
— — V/µs Tj = 125°C
Notes: 2. Measurement using the gate trigger characteristics measurement circuit.
3. The contact thermal resistance Rth (c-f) in case of greasing is 0.5°C/W.
4. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below.
5. High sensitivity (IGT 10 mA) is also available. (IGT item: 1)
Test conditions
1. Junction temperature
Tj = 125°C
2. Rate of decay of on-state commutating current
(di/dt)c = –1.5 A/ms
3. Peak off-state voltage
VD = 400 V
Commutating voltage and current waveforms
(inductive load)
Supply Voltage
Time
Main Current
Main Voltage
(dv/dt)c
(di/dt)c
Time
Time
VD
www.kersemi.com


Part Number BCR3KM-12LA
Description Triac
Maker KERSEMI
Total Page 7 Pages
PDF Download

BCR3KM-12LA Datasheet PDF

View PDF for Mobile








Similar Datasheet

1 BCR3KM-12LA Triac Low Power Use
Renesas Technology
2 BCR3KM-12LA Triac
KERSEMI
3 BCR3KM-12LB Triac Low Power Use
Renesas Technology





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy