4N60H - N-CHANNEL MOSFET

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KIA

4N60H N-CHANNEL MOSFET by KIA - Datasheet Preview — Datasheet preview – 4N60H

Datasheet Details

Part number	4N60H
Manufacturer	KIA
File Size	467.42 KB
Description	N-CHANNEL MOSFET
Datasheet	4N60H Datasheet
Additional preview pages of the 4N60H datasheet.

Product details

Description

The KIA4N60H N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers.

Features

RDS(ON) =2.3Ω@ VGS=10V.
Low gate charge (typical 13.5nC).
High ruggedness.
Fast switching capability.
Avalanche energy specified.
Improved dv/dt capability 3. Pin configuration Pin 1 2 3 4 1 of 6 Function Gate Drain Source Drain Rev 1.1 JAN 2014 KIA.

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Published: Jul 8, 2016 |