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KKA2586 - 1024 x 8-Bit n-MOS EEPROM

Description

SYMBOL Uss CS TP1 TP2 SDA SCL TP3 Ucc PIN 1 2 3 4 5 6 7 8 DESCRIPTION GND Chip selection Testing pin Testing pin (0V - normal mode, 5V - chip erasing) Informational line, input/output Clock input Testing pin, not connected Supply Voltage PIN ASSIGNMENT Ucc TP3 U CS 1 2 8 7 TP1 3 4 6 5 SCL S

Features

  • Non-volatile storage of information during 10 years Single supply (Ucc=4,75 B - 5,25 B) On-chip voltage multiplier On-chip generator of bulk biasing Serial input/output I2C-bus 10 000 ERASE/WRITE cycles per byte; Internal reprogramming (no external components) Duration of the ERASE/WRITE cycle is 15 ms Temperature range: 0 ÷ +700C.

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Datasheet Details

Part number KKA2586
Manufacturer KODENSHI KOREA
File Size 189.18 KB
Description 1024 x 8-Bit n-MOS EEPROM
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www.DataSheet4U.com TECHNICAL DATA 2 KKA2586 1024 x 8-Bit n-MOS EEPROM with I C-Bus Interface The KKA2586 is a 8-Kbit (1024 x 8-bit) n-MOS floating gate electrically erasable programmable read only memory (EEPROM). IC works in systems with serial I2C-bus. Up to two KKA2586 devices may be connected to the I2C-bus.The programming of the array is implemented by electron’s tunneling. The programming voltage is generated on-chip, using a voltage multiplier. Device is functionally identical to the SDA2586, Siemens. IC are made in 8-pin DIP and 8-pin SOP.
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