SMK0160IS Key Features
- Drain-Source breakdown voltage: BVDSS=600V (Min.)
- Low gate charge: Qg=3.9nC (Typ.)
- Low drain-source On resistance: RDS(on)=11.5Ω (Max.)
- 100% avalanche tested
- RoHS pliant device
- Y: Year Code
- WW: Week Code
- Part: SMK0160IS
- Description: Advanced N-Ch Power MOSFET
- Manufacturer: Kodenshi AUK Group
- Size: 482.23 KB
Other SMK0160IS Datasheets
| Manufacturer | Part Number | Description |
|---|---|---|
Kodenshi AUK Group |
SMK0160I | Advanced N-Ch Power MOSFET |
Kodenshi AUK Group |
SMK0160 | Advanced N-Ch Power MOSFET |
|
Kodenshi AUK Group |
SMK0160D | Advanced N-Ch Power MOSFET |