SMK0260IS Key Features
- Drain-Source breakdown voltage: BVDSS=600V (Min.)
- Low gate charge: Qg=7nC (Typ.)
- Low drain-source On resistance: RDS(on)=3.9Ω (Typ.)
- 100% avalanche tested
- RoHS pliant device
- Y: Year Code
- WW: Week Code
- Part: SMK0260IS
- Description: Advanced N-Ch Power MOSFET
- Manufacturer: Kodenshi AUK Group
- Size: 460.58 KB
Other SMK0260IS Datasheets
| Manufacturer | Part Number | Description |
|---|---|---|
Kodenshi AUK Group |
SMK0260I | Advanced N-Ch Power MOSFET |
Kodenshi AUK Group |
SMK0260D | Advanced N-Ch Power MOSFET |