SMK0465IS Key Features
- Drain-source breakdown voltage: BVDSS=650V
- Low gate charge: Qg=11.2nC (Typ.)
- Low drain-source On-resistance: RDS(on)=3Ω (Max.)
- RoHS pliant device
- Halogen free package
- YWW: Date Code (year, week)
- Part: SMK0465IS
- Description: Advanced N-Ch Power MOSFET
- Manufacturer: Kodenshi AUK Group
- Size: 478.17 KB
Related Kodenshi AUK Group Datasheets
| Part Number | Description |
|---|---|
| SMK0465D | Advanced N-Ch Power MOSFET |
| SMK0465F | Advanced N-Ch Power MOSFET |
| SMK0465FJ | Advanced N-Ch Power MOSFET |
| SMK0460F | Advanced N-Channel Power MOSFET |
| SMK0460I | Advanced N-Ch Power MOSFET |