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SMK0860P - Advanced N-Ch Power MOSFET

Key Features

  • High Voltage: BVDSS=600V(Min. ).
  • Low Crss : Crss=9.7pF(Typ. ).
  • Low gate charge : Qg=22nC(Typ. ).
  • Low RDS(on) :RDS(on)=1.2Ω(Max. ) PIN Connection D G Ordering Information Type No. SMK0860P Marking SMK0860 Package Code TO-220AB-3L GDS TO-220AB-3L S Absolute maximum ratings (TC=25°C unless otherwise noted) Characteristic Drain-source voltage Gate-source voltage Drain current (DC).
  • Drain current (Pulsed).
  • Symbol VDSS VGSS ID (Tc=25℃) (Tc=100℃) IDM PD ②.

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Datasheet Details

Part number SMK0860P
Manufacturer KODENSHI KOREA
File Size 426.59 KB
Description Advanced N-Ch Power MOSFET
Datasheet download datasheet SMK0860P Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Semiconductor SMK0860P Advanced N-Ch Power MOSFET SWITCHING REGULATOR APPLICATIONS Features • High Voltage: BVDSS=600V(Min.) • Low Crss : Crss=9.7pF(Typ.) • Low gate charge : Qg=22nC(Typ.) • Low RDS(on) :RDS(on)=1.2Ω(Max.) PIN Connection D G Ordering Information Type No. SMK0860P Marking SMK0860 Package Code TO-220AB-3L GDS TO-220AB-3L S Absolute maximum ratings (TC=25°C unless otherwise noted) Characteristic Drain-source voltage Gate-source voltage Drain current (DC) * Drain current (Pulsed) * Symbol VDSS VGSS ID (Tc=25℃) (Tc=100℃) IDM PD ② ② ① ① IAS EAS IAR EAR TJ Tstg Rating 600 ±30 7.5 4.7 30 90 7.5 325 7.5 21.