KPDE0301M51 - InGaAs Photodiode

KPDE0301M51 Description

InGaAs Photodiode .

KPDE0301M51 Features

* NIR sensitive up to 1700nm
* Plastic mold package

KPDE0301M51 Applications

* Optical switches
* Sensors and industrial controls KPDE0301M51 1. Cathode 2. Anode Unit: mm Absolute Maximum Ratings Parameter Reverse voltage Reverse current Forward current Operating temperature Storage temperature Symbol VR IR IF Topr Tstg Value 20 500 50 -20 to +80 -30 to

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Datasheet Details

Part number: KPDE0301M51
Manufacturer: KYOSEMI
File Size: 91.02 KB
Datasheet: KPDE0301M51-KYOSEMI.pdf
Description: InGaAs Photodiode

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InGaAs Photodiode KYOSEMI

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