Click to expand full text
Silicon N Channel Junction FETs
LH03 series of products interconvertible
2SK304
2SK304
D Symbol
Applications For charge sensor, meter amplifier circuit,
rheostat , chopper and gain controller for AGC, electronic switch.
Electrical characteristics (Ta=25℃)
SG
Packag
1-Source 2-Gate 3-Drain TO-92 or TO-92s
Parameter Drain to Source Voltage Gate to Drain ( Source) Voltage Gate to Source Cut-off Voltage Gate to Source Reverse Current Saturation Drain Current Forward transfer admittance
Symbl BVDS VGD(S) VGS(off) IGSS IDSS
|Yfs|
Conditions IDS= 1uA IGS= -1uA VDS=10V IDS=1uA VDS=0VVGS=-20V VDS=10V VGS=0V VDS=10V VGS=0V
f=1KHz
min 30 -30 -0.3
0.6 2.5
typ max unit V V
-2.5 V -1.0 nA 12 mA
mS
Classifications
Marking Rank (LH) Marking Rank IDSS Classification (mA )
O C 0.6~1.5
Y D 1.