Datasheet4U Logo Datasheet4U.com

16N06G - N-Channel Trench Power MOSFET

Key Features

  • ƽ VDS (V) = 60V ƽ ID = 20 A (VGS = ±20V) ƽ RDS(ON) ˘ 15m¡ (VGS =10V) SOP-8 1.50 0.15 1 Source 2 Source 3 Source 4 Gate 5 Drain 6 Drain 7 Drain 8 Drain DDD D G S SS +0.040.21 -0.02 Ƶ Absolute Maximum Ratings Ta = 25ć Parameter Drain-Source Voltage ˄VGS=0V˅ Gate-Source Voltage ˄VDS=0V˅ Continuous Drain Current Pulsed Drain Current TC=25ć TC=100ć Power Dissipation Thermal Resistance. Junction- to-Abmient Junction Temperature Storage Temperature Range TC=25ć TC=100ć Symbol VDS VGS ID IDM P.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
16N06LE N-Channel Logic Level Power MOSFET Fairchild Semiconductor
16N03L RFD16N03L Fairchild Semiconductor
16N05 N-Channel Power MOSFET Fairchild Semiconductor
16N15 FQP16N15 Fairchild Semiconductor
16N25 FQP16N25 Fairchild Semiconductor

Other Datasheets by Kexin Semiconductor

Part Number Description

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SMD Type N-Channel Trench Power MOSFET EMB16N06G MOSFET Ƶ Features ƽ VDS (V) = 60V ƽ ID = 20 A (VGS = ±20V) ƽ RDS(ON) ˘ 15m¡ (VGS =10V) SOP-8 1.50 0.15 1 Source 2 Source 3 Source 4 Gate 5 Drain 6 Drain 7 Drain 8 Drain DDD D G S SS +0.040.21 -0.02 Ƶ Absolute Maximum Ratings Ta = 25ć Parameter Drain-Source Voltage ˄VGS=0V˅ Gate-Source Voltage ˄VDS=0V˅ Continuous Drain Current Pulsed Drain Current TC=25ć TC=100ć Power Dissipation Thermal Resistance.Junction- to-Abmient Junction Temperature Storage Temperature Range TC=25ć TC=100ć Symbol VDS VGS ID IDM PD RthJA TJ Tstg Rating 60 ±20 20 14 80 2.5 1.6 50 150 -55 to 150 Unit V A W ć/W ć www.kexin.com.