2SA1612

The 2SA1612 is Transistor designed by Kexin.

Product Overview

Kexin

Part number	2SA1612
Manufacturer	Kexin
File Size	63.64 KB
Description	Transistor
Datasheet	2SA1612_Kexin.pdf
Additional preview pages of the 2SA1612 datasheet.

High DC current gain 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current (DC) Total power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC PT Tj Tstg Rating -120 -120 -5 -50 150 150 -55 to +150 Unit V V V mA mW Electrical Characteristics Ta = 25 Parameter Collector cutoff current Emitter cutoff current DC current gain Collector-emitter saturat.

📁 Similar Datasheet

2SA1610 - HIGH SPEED SWITCHING PNP SILICON EPITAXIAL TRANSISTOR (NEC)
2SA1611 - PNP Transistor (JCET)
2SA1615 - PNP Silicon Transistor (NEC)
2SA1615-Z - PNP Silicon Transistor (NEC)
2SA1617 - Silicon PNP Epitaxial Transistor (Hitachi Semiconductor)
2SA1618 - Silicon PNP Transistor (Toshiba Semiconductor)
2SA1619 - Silicon PNP epitaxial planer type Transistor (Panasonic Semiconductor)
2SA1619A - Silicon PNP epitaxial planer type Transistor (Panasonic Semiconductor)

Other Datasheets by Kexin

Published: Oct 25, 2013 |