2SB1001
Features
Low frequency power amplifier
Absolute Maximum Ratings Ta = 25
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current peak collector current Collector power dissipation Junction temperature Storage temperature
- 1. PW 10 ms; d 0.02. Symbol VCBO VCEO VEBO IC ICP
- 1 PC
- 2 Tj Tstg Rating -20 -16 -6 -2 -3 1 150 -55 to +150 Unit V V V A A W
- 2. Value on the alumina ceramic board (12.5 X 20 X 0.7 mm)
Electrical Characteristics Ta = 25
Parameter Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Gain bandwidth product Collector output capacitance Symbol Testconditons Min -20 -16 -6 -0.1 -0.1 100 -0.15 -1 150 50 320 -0.3 -1.2 V V MHz p F Typ Max Unit V V V ìA ìA V(BR)CBO IC = -10 ìA, IE = 0 V(BR)CEO IC = -1 m A, RBE = V(BR)EBO IE...
