+0.1 2.4-0.1
High hFE: hFE = 600 3600. High voltage: VCEO = 50 V. High collector current: IC = 150 mA (max). Small package. +0.1 1.3-0.1
1
+0.1 0.95-0.1 +0.1 1.9-0.1
2
0.55
0.4
3
+0.05 0.1-0.01
+0.1 0.97-0.1
1.Base 2.Emitter 3.collector
Absolute Maximum Ratings Ta = 25
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj.
Full PDF Text Transcription for 2SC3295 (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
2SC3295. For precise diagrams, and layout, please refer to the original PDF.
SMD Type Silicon NPN Epitaxial 2SC3295 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors IC Unit: mm Features +0.1 2.4-0.1 High hFE: hFE = 600 3600. High voltage: VCEO = 50 V....
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ures +0.1 2.4-0.1 High hFE: hFE = 600 3600. High voltage: VCEO = 50 V. High collector current: IC = 150 mA (max). Small package. +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.
2SC3295 Datasheet
