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2SK2414 - MOS Field Effect Transistor

Key Features

  • Low On-Resistance RDS(on)1 = 70 m MAX. (@ VGS = 10 V, ID = 5.0 A) RDS(on)2 = 95 m MAX. (@ VGS = 4 V, ID = 5.0 A) Low Ciss Ciss = 840 pF TYP. Built-in G-S Gate Protection Diodes High Avalanche Capability Ratings +0.29.70 -0.2 TO-252 6.50+0.15 -0.15 5.30+0.2 -0.2 2.30+0.1 -0.1 0.50+0.8 -0.7 Unit: mm +0.151.50 -0.15 3.80 +0.155.55 -0.15 0.80+0.1 -0.1 0.127 max 2.3 4.60+0.15 -0.15 0.60+0.1 -0.1 +0.150.50 -0.15 +0.281.50 -0.1 +0.252.65 -0.1 1 Gate 2 Drain 3 Source Absolute Maximum Rat.

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SMD Type MOS Field Effect Transistor 2SK2414 MOSFICET Features Low On-Resistance RDS(on)1 = 70 m MAX. (@ VGS = 10 V, ID = 5.0 A) RDS(on)2 = 95 m MAX. (@ VGS = 4 V, ID = 5.0 A) Low Ciss Ciss = 840 pF TYP. Built-in G-S Gate Protection Diodes High Avalanche Capability Ratings +0.29.70 -0.2 TO-252 6.50+0.15 -0.15 5.30+0.2 -0.2 2.30+0.1 -0.1 0.50+0.8 -0.7 Unit: mm +0.151.50 -0.15 3.80 +0.155.55 -0.15 0.80+0.1 -0.1 0.127 max 2.3 4.60+0.15 -0.15 0.60+0.1 -0.1 +0.150.50 -0.15 +0.281.50 -0.1 +0.252.65 -0.