2SK3018 - N-Channel MOSFET

Kexin

Datasheet Details

0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 1. Gate ∗ Gate +0.1 0.38-0.1 0-0.1 2.Emitter 2. Source Protection Diode 3. Drain 3.collector Source ¡ö Absolute Maximum Ratings Ta = 25¡æ Parameter Symbol VDSS VGSS ID IDP.
1 PD.
2 Rth(ch-a).
Tch Tstg 2 Rating 30 ¡À20 Unit V V mA mW ¡æ /W ¡æ ¡æ Drain-source voltage Gate-source voltage Drain current Total power dissipation Channel to ambient Channel Temperature Storage temperature.
1. Pw¡Ü 10ìs, duty cycle¡Ü 1%. 100 400 2.

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Published: Oct 29, 2014 |