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2SK3424 - MOSFET

Features

  • 4.5-V drive available Low on-state resistance RDS(on)1 = 1.5m MAX. (VGS = 10 V, ID = 24 A) Low gate charge QG = 34 nC TYP. (ID = 48 A, VDD = 24V, VGS = 10 V) Built-in gate protection diode Surface mount device available Absolute Maximum Ratings Ta = 25 Parameter Drain to source voltage Gate to source voltage Drain current Power dissipation TC=25 TA=25 Channel temperature Storage temperature.
  • PW 10 s,Duty Cycle 1% Symbol VDSS VGSS ID Idp.
  • PD Tch Tstg TO-263 +0.2 4.57+0.1 -0.2 1.27-0.

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Datasheet Details

Part number 2SK3424
Manufacturer Kexin
File Size 40.66 KB
Description MOSFET
Datasheet download datasheet 2SK3424 Datasheet
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Full PDF Text Transcription

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SMD Type MOS Field Effect Transistor 2SK3424 MOSFET Features 4.5-V drive available Low on-state resistance RDS(on)1 = 1.5m MAX. (VGS = 10 V, ID = 24 A) Low gate charge QG = 34 nC TYP. (ID = 48 A, VDD = 24V, VGS = 10 V) Built-in gate protection diode Surface mount device available Absolute Maximum Ratings Ta = 25 Parameter Drain to source voltage Gate to source voltage Drain current Power dissipation TC=25 TA=25 Channel temperature Storage temperature * PW 10 s,Duty Cycle 1% Symbol VDSS VGSS ID Idp * PD Tch Tstg TO-263 +0.2 4.57+0.1 -0.2 1.27-0.1 Unit: mm +0.11.27 -0.1 +0.22.54 -0.2 15.25-+00..22 5.60 +0.28.7 -0.2 +0.25.28 -0.2 1.27+0.1 -0.1 0.1max 2.54+0.2 -0.2 5.08+0.1 -0.1 0.81+0.1 -0.1 2.54 0.4+0.2 -0.2 Rating 30 20 48 192 50 1.
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