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AO4854 - Dual N-Channel MOSFET

Key Features

  • s.
  • VDS (V) = 30V.
  • ID = 8A (VGS = 10V).
  • RDS(ON) ＜ 19mΩ (VGS = 10V).
  • RDS(ON) ＜ 23mΩ (VGS = 4.5V).
  • RDS(ON) ＜ 26mΩ (VGS = 4V).
  • ESD Rating: 2KV HBM +0.040.21 -0.02 SOP-8 MOSFET Unit:mm 1.50 0.15 1 S2 2 G2 3 S1 4 G1 5 D1 6 D1 7 D2 8 D2 D1 D2 G1 G2 S1 S2.
  • Absolute Maximum Ratings Ta = 25℃ Drain-Source Voltage Gate-Source Voltage Parameter Continuous Drain Current Pulsed Drain Current Avalanche Current Repetitive Avalanche Energy Power Dissipation Therma.

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Full PDF Text Transcription for AO4854 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for AO4854. For precise diagrams, and layout, please refer to the original PDF.

SMD Type Dual N-Channel MOSFET AO4854 (KO4854) ■ Features ● VDS (V) = 30V ● ID = 8A (VGS = 10V) ● RDS(ON) ＜ 19mΩ (VGS = 10V) ● RDS(ON) ＜ 23mΩ (VGS = 4.5V) ● RDS(ON) ＜ 26m...

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S(ON) ＜ 19mΩ (VGS = 10V) ● RDS(ON) ＜ 23mΩ (VGS = 4.5V) ● RDS(ON) ＜ 26mΩ (VGS = 4V) ● ESD Rating: 2KV HBM +0.040.21 -0.02 SOP-8 MOSFET Unit:mm 1.50 0.15 1 S2 2 G2 3 S1 4 G1 5 D1 6 D1 7 D2 8 D2 D1 D2 G1 G2 S1 S2 ■ Absolute Maximum Ratings Ta = 25℃ Drain-Source Voltage Gate-Source Voltage Parameter Continuous Drain Current Pulsed Drain Current Avalanche Current Repetitive Avalanche Energy Power Dissipation Thermal Resistance.Junction- to-Ambient Thermal Resistance.Junction- to-Lead Junction Temperature Storage Temperature Range TA=25℃ TA=70℃ L=0.1mH TA=25℃ TA=70℃ t ≤ 10s Steady-State Symbol VDS VGS ID IDM IAS, IAR EAS, EAR PD

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