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BSS79B - NPN Silicon Switching Transistors

Download the BSS79B datasheet PDF. This datasheet also covers the BSS79 variant, as both devices belong to the same npn silicon switching transistors family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • High DC current gain: 0.1mA to 500 mA. Low collector-emitter saturation voltage. +0.12.4 -0.1 SOT-23 2.9+0.1 -0.1 0.4+0.1 -0.1 3 12 0.95+0.1 -0.1 1.9+0.1 -0.1 Absolute Maximum Ratings Ta = 25 Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Peak collector current Base current Peak base current Total power dissipation,TS = 77 Junction temperature Storage temperature Junction - soldering point Symbol VCEO VCBO VEBO IC ICM IB IBM Ptot Tj Tstg Rt.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (BSS79-Kexin.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
BSS79B GENERAL PURPOSE TRANSISTOR Motorola
BSS79B NPN Silicon Switching Transistors (High DC current gain Low collector-emitter saturation voltage) Siemens Semiconductor Group
BSS79B NPN Silicon Switching Transistors Infineon Technologies AG
BSS79B (BSS79B/C) SOT23 NPN SILICON PLANAR SWITCHING TRANSISTOR Zetex Semiconductors
BSS79 NPN Silicon Switching Transistors (High DC current gain Low collector-emitter saturation voltage) Siemens Semiconductor Group

Other Datasheets by Kexin Semiconductor

Part Number Description
BSS79 NPN Silicon Switching Transistors
BSS79C NPN Silicon Switching Transistors
BSS123 N-Channel MOSFET
BSS138 N-Channel MOSFET
BSS138E N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SMD Type TransistIoCrs NPN Silicon Switching Transistors BSS79,BSS81 Features High DC current gain: 0.1mA to 500 mA. Low collector-emitter saturation voltage. +0.12.4 -0.1 SOT-23 2.9+0.1 -0.1 0.4+0.1 -0.1 3 12 0.95+0.1 -0.1 1.9+0.1 -0.1 Absolute Maximum Ratings Ta = 25 Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Peak collector current Base current Peak base current Total power dissipation,TS = 77 Junction temperature Storage temperature Junction - soldering point Symbol VCEO VCBO VEBO IC ICM IB IBM Ptot Tj Tstg RthJS BSS79 BSS81 40 35 75 6 800 1 100 200 330 150 -65 to +150 220 Unit V V V mA A mA mA mW K/W 0-0.1 +0.10.38 -0.1 +0.10.97 -0.1 +0.11.3 -0.1 0.55 0.4 Unit: mm 0.1+0.05 -0.01 1.Base 2.Emitter 3.collector www.