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BSS82B - PNP Silicon Switching Transistors

Download the BSS82B datasheet PDF. This datasheet also covers the BSS80 variant, as both devices belong to the same pnp silicon switching transistors family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • High DC current gain: 0.1mA to 500 mA. Low collector-emitter saturation voltage. +0.12.4 -0.1 SOT-23 2.9+0.1 -0.1 0.4+0.1 -0.1 3 12 0.95+0.1 -0.1 1.9+0.1 -0.1 Absolute Maximum Ratings Ta = 25 Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Peak collector current Base current Peak base current Total power dissipation,TS = 77 Junction temperature Storage temperature Junction - soldering point Symbol VCEO VCBO VEBO IC ICM IB IBM Ptot Tj Tstg Rth.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (BSS80-Kexin.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
BSS82B PNP Silicon Switching Transistors (High DC current gain Low collector-emitter saturation voltage) Siemens Semiconductor Group
BSS82B PNP Silicon Switching Transistors Infineon Technologies AG
BSS82B (BSS82B/C) SOT23 PNP SILICON PLANAR SWITCHING TRANSISTORS Zetex Semiconductors
BSS82 PNP Transistors Infineon Technologies
BSS82C PNP Silicon Switching Transistors (High DC current gain Low collector-emitter saturation voltage) Siemens Semiconductor Group

Other Datasheets by Kexin Semiconductor

Part Number Description
BSS82 PNP Silicon Switching Transistors
BSS82C PNP Silicon Switching Transistors
BSS80 PNP Silicon Switching Transistors
BSS80B PNP Silicon Switching Transistors
BSS80C PNP Silicon Switching Transistors

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SMD Type TransistIoCrs PNP Silicon Switching Transistors BSS80,BSS82 Features High DC current gain: 0.1mA to 500 mA. Low collector-emitter saturation voltage. +0.12.4 -0.1 SOT-23 2.9+0.1 -0.1 0.4+0.1 -0.1 3 12 0.95+0.1 -0.1 1.9+0.1 -0.1 Absolute Maximum Ratings Ta = 25 Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Peak collector current Base current Peak base current Total power dissipation,TS = 77 Junction temperature Storage temperature Junction - soldering point Symbol VCEO VCBO VEBO IC ICM IB IBM Ptot Tj Tstg RthJS BSS80 BSS82 40 60 60 5 800 1 100 200 330 150 -65 to +150 220 Unit V V V mA A mA mA mW K/W 0-0.1 +0.10.38 -0.1 +0.10.97 -0.1 +0.11.3 -0.1 0.55 0.4 Unit: mm 0.1+0.05 -0.01 1.Base 2.Emitter 3.collector www.